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AP75T12GI-HF - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Description

AP75T12 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Full PDF Text Transcription (Reference)

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Advanced Power Electronics Corp. AP75T12GI-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Lower On-resistance ▼ RoHS Compliant & Halogen-Free G D S Description AP75T12 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220CFM package is widely preferred for all commercialindustrial through hole applications. The mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink. BVDSS RDS(ON) ID 120V 12.5mΩ 41A GD S TO-220CFM(I) Absolute Maximum Ratings@Tj=25oC.
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