Datasheet Details
| Part number | AP6680AGM |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 255.10 KB |
| Description | N-Channel MOSFET |
| Datasheet | AP6680AGM_AdvancedPowerElectronics.pdf |
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Overview: AP6680AGM RoHS-pliant Product Advanced Power Electronics Corp.
| Part number | AP6680AGM |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 255.10 KB |
| Description | N-Channel MOSFET |
| Datasheet | AP6680AGM_AdvancedPowerElectronics.pdf |
|
|
|
Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
D D D D SO-8 S S S G Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 .DataSheet.net/ Rating 30 +20 12 9.8 60 2.5 0.02 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 50 Unit ℃/W Data and specifications subject to change without notice 1 200810084 Datasheet pdf - http://..co.kr/ AP6680AGM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min.
30 0.8 - Typ.
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