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AP6680AGM-HF - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

AP6680A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Other Datasheets by Advanced Power Electronics Corp

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AP6680AGM N-Channel MOSFET
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Full PDF Text Transcription

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Advanced Power Electronics Corp. AP6680AGM-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-Resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G Description AP6680A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SO-8 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. D S BVDSS RDS(ON) ID D D D D SO-8 30V 11mΩ 12A G S S S Absolute Maximum Ratings@Tj=25o.
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