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AP50L02P - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

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Datasheet Details

Part number AP50L02P
Manufacturer Advanced Power Electronics
File Size 144.72 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet AP50L02P Datasheet
Additional preview pages of the AP50L02P datasheet.

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Full PDF Text Transcription

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AP50L02S/P Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 25V 17mΩ 40A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP50L02P) is available for low-profile applications. G D G D S TO-263(S) Absolute Maximum Ratings http://www.DataSheet4U.net/ S Rating 25 ± 20 40 27 140 44.6 0.
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