Datasheet Details
| Part number | AP4525GEH |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 186.79 KB |
| Description | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet |
 AP4525GEH Datasheet
|
|
|
| Part number | AP4525GEH |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 186.79 KB |
| Description | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet |
AP4525GEH Datasheet
|
|
|
|
S1 G1 S2 G2 D1/D2 N-CH P-CH TO-252-4L BVDSS RDS(ON) ID BVDSS RDS(ON) ID 40V 28mΩ 15A -40V 42mΩ -12A Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
D1 D2 G1 G2 S1 Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Rating N-channel P-channel 40 -40 ±16 ±16 15.0 -12.0 12.0 -10.0 50 -50 10.4 0.083 -55 to 150 -55 to 150 Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Value 12 110 S2 Units V V A A A W W/℃ ℃ ℃ Unit ℃/W ℃/W Data and specifications subject to change without notice 1 200809235 AP4525GEH N-CH Electrical Characteristics@ Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Test Conditions Drain-Source Breakdown Voltage VGS=0V, ID=250uA Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA Static Drain-Source On-Resistance2 VGS=10V, ID=6A VGS=4.5V, ID=4A Gate Threshold Voltage VDS=VGS, ID=250uA Forward Transconductance VDS=10V, ID=6A Drain-Source Leakage Current VDS=40V, VGS=0V Drain-Source Leakage Current (Tj=70oC) VDS=32V, VGS=0V Gate-Source Leakage Total Gate Charge2 VGS=±16V ID=6A Gate-Source Charge VDS=20V Gate-Drain ("Miller") Charge Turn-on Delay Time2 VGS=4.5V VDS=20V Rise Time Turn-off Delay Time Fall Time ID=6A RG=3Ω
Advanced Power Electronics Corp.
AP4525GEH RoHS-compliant Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Good Thermal Performance ▼ Fast Switching.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AP4525GEM | N- and P-Channel 30V MOSFET | VBsemi |
| Part Number | Description |
|---|---|
| AP4525GEH-A | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4525GEH-A-HF-3 | Complementary N and P-channel Enhancement-mode Power MOSFETs |
| AP4525GEH-HF | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4525GEH-HF-3 | Complementary N and P-channel Enhancement-mode Power MOSFET |
| AP4525GEM | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4525GEM-HF | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4500GM | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4500GM-HF | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4501AGEM-HF | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4501AGEY-HF | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |