AP4525GEH - N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Product Overview

Advanced Power Electronics

Datasheet Details

Part number	AP4525GEH
Manufacturer	Advanced Power Electronics
File Size	186.79 KB
Description	N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	AP4525GEH Datasheet
Additional preview pages of the AP4525GEH datasheet.

Product details

Description

S1 G1 S2 G2 D1/D2 N-CH P-CH TO-252-4L BVDSS RDS(ON) ID BVDSS RDS(ON) ID 40V 28mΩ 15A -40V 42mΩ -12A Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.D1 D2 G1 G2 S1 Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Curre

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Other Datasheets by Advanced Power Electronics

AP4525GEH-A - N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Published: Mar 26, 2008 |