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AP4515GM - N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com AP4515GM Pb Free Plating Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Performance ▼ RoHS Compliant SO-8 SO-8 D2 D1 D2 D1 D1 D1 D2 D2 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH BVDSS RDS(ON) ID G2 G2 S2 G1S2 G1 S1 S1 35V 22mΩ 7.7A -35V 40mΩ -5.7A D2 P-CH BVDSS RDS(ON) ID D1 Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. G1 G2 S1 S2 The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.