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AP4515GM - N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness.

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Other Datasheets by Advanced Power Electronics Corp

Part Number Description
AP4515GM-HF N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP4511GD N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP4511GED N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP4511GED-HF N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP4511GH N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP4511GH-A N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP4511GH-HF N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP4511GM N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP4511GM-HF N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP4513GD N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com AP4515GM Pb Free Plating Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Performance ▼ RoHS Compliant SO-8 SO-8 D2 D1 D2 D1 D1 D1 D2 D2 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH BVDSS RDS(ON) ID G2 G2 S2 G1S2 G1 S1 S1 35V 22mΩ 7.7A -35V 40mΩ -5.7A D2 P-CH BVDSS RDS(ON) ID D1 Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. G1 G2 S1 S2 The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.