AP4515GM
Description
The Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and costeffectiveness.
G1
G2 S1 S2
The SO-8 package is universally preferred for all mercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating N-channel 35 ±20 7.7 6.2 30 2.0 0.016 -55 to 150 -55 to 150 P-channel -35 ±12 -5.7 -4.6 -30
Units V V A A A W W/ ℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Thermal Resistance Junction-ambient
Value Max. 62.5
Unit ℃/W
Data and specifications subject to change without notice
200408051-1/7
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N-CH...
