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AP4416GJ - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Download the AP4416GJ datasheet PDF. This datasheet also covers the AP4416GH variant, as both devices belong to the same n-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.

The through-hole version (AP4416GJ) is available for low-profile applications.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AP4416GH-AdvancedPowerElectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Advanced Power Electronics Corp

Part Number Description
AP4416GH N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP4410AGM N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP4410AGM-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP4410GM N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP4410GM-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription

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AP4416GH/J Pb Free Plating Product Advanced Power Electronics Corp. ▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 35V 45mΩ 20A Description The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP4416GJ) is available for low-profile applications. G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Rating 35 ±20 20 12 50 26 0.
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