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AP4228M - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, lower on-resistance and cost-effectiveness.

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AP4228M Advanced Power Electronics Corp. ▼ Low On-Resistance ▼ Simple Drive Requirement ▼ Dual N MOSFET Package S2 G2 D1 D1 D2 D2 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 26mΩ 6.8A SO-8 S1 G1 Description www.DataSheet4U.com The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, lower on-resistance and cost-effectiveness. G1 S1 D1 G2 D2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 3 Rating 30 ± 20 6.8 5.5 40 2 0.