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AP3402GEJ - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Download the AP3402GEJ datasheet PDF. This datasheet also covers the AP3402GEH variant, as both devices belong to the same n-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AP3402GEH-AdvancedPowerElectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Advanced Power Electronics Corp

Part Number Description
AP3402GEH N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP3403GH P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP3403GJ P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP3405GH-HF P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP30G100W N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Full PDF Text Transcription

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AP3402GEH/J Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low On-resistance ▼ Single Drive Requirement ▼ Surface Mount Package ▼ RoHS Compliant G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 35V 18mΩ 38A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP3402GEJ) are available for low-profile applications.
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