AP3310GJ-HF mosfet equivalent, p-channel enhancement mode power mosfet.
G
D S
TO-251(J)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-S.
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
G D S
TO-252(H)
This device is suited for low voltage and battery power applications.
G
D S
TO-251(J)
Ab.
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