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AP28G40GEJ - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Download the AP28G40GEJ datasheet PDF. This datasheet also covers the AP28G40GEH variant, as both devices belong to the same n-channel insulated gate bipolar transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (AP28G40GEH-AdvancedPowerElectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Advanced Power Electronics Corp

Part Number Description
AP28G40GEH N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
AP28G40GEM-HF N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
AP28G40GEO N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
AP28G45EM N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
AP28G45GEM N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Full PDF Text Transcription

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Advanced Power Electronics Corp. ▼ High Input Impedance ▼ High Peak Current Capability ▼ Low Gate Drive ▼ Strobe Flash Applications ▼ RoHS Compliant & Halogen-Free AP28G40GEH/J Halogen-Free Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR G CE TO-252(H) VCE ICP G 400V 150A C G C E TO-251(J) Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating VCE Collector-Emitter Voltage 400 VGEP Peak Gate-Emitter Voltage ±6 ICP Pulsed Collector Current, VGE @ 2.5V 150 PD@TA=25℃ Maximum Power Dissipation 1.1 TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range 150 . E Units V V A W oC oC Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ.
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