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AP2612GY-HF - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

The S0T-26 package is widely used for commercial-industrial surface mount applications.

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Other Datasheets by Advanced Power Electronics Corp

Part Number Description
AP2610GY-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP2611GY-HF P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP2611GYT-HF P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP2613GY-HF P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP2613GYT-HF P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription

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AP2612GY-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Capable of 1.8V Gate Drive ▼ Simple Drive Requirement ▼ Surface Mount Device ▼ RoHS Compliant D D N-CHANNEL ENHANCEMENT MODE POWER MOSFET S BVDSS RDS(ON) G D 30V 35mΩ 6A ID SOT-26 D Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The S0T-26 package is widely used for commercial-industrial surface mount applications. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 4.5V Continuous Drain Current , VGS @ 4.5V Pulsed Drain Current 1 3 3 Rating 30 +8 6 4.
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