AP2609GY-HF mosfet equivalent, p-channel enhancement mode power mosfet.
G S
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Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage .
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,low on-resistance and cost-effectiveness. The SOT-26 package is widely used for all commercial-industrial applications.
G S
Absolute Maximum Ratings
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