AP2604GY mosfet equivalent, n-channel enhancement mode power mosfet.
D
G S
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Volta.
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The S0T-26 package is universally used for all commercial-industrial applications.
D
G S.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 57.73KB)