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AP2535GEY-HF - N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

AP2535 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Advanced Power Electronics Corp. AP2535GEY-HF Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 1.8V Gate Drive ▼ Lower Gate Charge D2 S1 D1 ▼ Fast Switching Performance ▼ RoHS Compliant & Halogen-Free SOT-26 G2 S2 G1 Description AP2535 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SOT-26 package is widely used for commercial surface mount applications. N-CH P-CH G1 BVDSS RDS(ON) ID BVDSS RDS(ON) ID D1 G2 S1 20V 32mΩ 4.6A -20V 80mΩ -3.
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