AP2530GY mosfet equivalent, n and p-channel enhancement mode power mosfet.
G1
D1
D2
G2 S1 S2
Absolute Maximum Ratings
www.DataSheet.net/
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TST.
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-26 package is universally used for all commercial-industrial applications.
G1
D1
.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 146.86KB)