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AP2451GY-HF - P AND N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

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AP2451GY N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Full PDF Text Transcription

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Advanced Power Electronics Corp. AP2451GY-HF Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 2.5V Gate Drive ▼ Lower on-resistance ▼ Surface Mount Package D2 D2 D1 D1 ▼ RoHS Compliant & Halogen-Free 2928-8 G2 S2 G1 S1 Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. N-CH P-CH BVDSS RDS(ON) ID BVDSS RDS(ON) ID D1 The 2928-8 J-lead package provides good on-resistance performance and space saving like TSOP-6. G1 G2 S1 20V 37mΩ 5A -20V 75mΩ -3.7A D2 S2 Absolute Maximum Ratings Symbol Parameter . VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current3 , VGS @ 4.
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