AP2322GN-HF mosfet equivalent, n-channel enhancement mode power mosfet.
G S
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage .
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-23 package is widely used for commercial-industrial applications.
G S
Absolute M.
Image gallery
TAGS
Download (Size : 114.22KB)