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AP2306AGEN-HF - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness device.

The SOT-23 package is widely used for commercial-industrial applications.

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Other Datasheets by Advanced Power Electronics Corp

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AP2306AGEN N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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AP2306AGN-HF N-channel enhancement mode power MOSFET
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Full PDF Text Transcription

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AP2306AGEN-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Capable of 2.5V Gate Drive ▼ Small Outline Package ▼ Surface Mount Device ▼ RoHS Compliant & Halogen-Free SOT-23 D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) S G 30V 50mΩ 4.1A ID Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness device. The SOT-23 package is widely used for commercial-industrial applications. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 4.5V Continuous Drain Current , VGS @ 4.5V Pulsed Drain Current 1 3 3 Rating 30 +6 4.1 3.3 16 1.
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