AP13N50I mosfet equivalent, n-channel enhancement mode power mosfet.
BVDSS RDS(ON) ID
500V 0.52Ω
14A
GD S
TO-220CFM(I)
Absolute Maximum Ratings
Symbol
Parameter
VDS VGS ID@TC=25℃ I.
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for commercialindustrial through.
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