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AP09N70I-A - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220CFM isolation package is universally preferred for all commercial-industrial through hole applications.

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Other Datasheets by Advanced Power Electronics Corp

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AP09N70I-A-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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AP09N70I-H-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Full PDF Text Transcription

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AP09N70I-A Pb Free Plating Product Advanced Power Electronics Corp. ▼ Dynamic dv/dt Rating ▼ Repetitive Avalanche Rated ▼ Fast Switching ▼ Simple Drive Requirement ▼ RoHS Compliant N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 650V 0.75Ω 9A G S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. GD S The TO-220CFM isolation package is universally preferred for all commercial-industrial through hole applications.
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