AP0904GJB-HF mosfet equivalent, n-channel enhancement mode power mosfet.
without lead-cutted.
G D S
TO-251S(JB)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG.
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on□ resistance and cost-effectiveness. The TO-251S short lead package is preferred for all commercialindustrial through-h.
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