AP04N70BF-A
AP04N70BF-A is N-CHANNEL ENHANCEMENT MODE POWER MOSFET manufactured by Advanced Power Electronics Corp.
AP04N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. TO-220FM type provide high blocking voltage to overe voltage surge and sag in the toughest power system with the best bination of fast switching,ruggedized design and cost-effectiveness. G
TO-220FM
The TO-220FM package is universally preferred for all mercial-industrial applications. The device is suited for switch mode power supplies ,DC-AC converters and high current high speed switching circuits.
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR EAR TSTG TJ
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Parameter Rating 650 4 2.5 15 33 0.26
Units V V A A A W W/ ℃ m J A m J ℃ ℃
Drain-Source Voltage Gate-Source Voltage
±30
Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range
100 4 4 -55 to 150 -55 to 150
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 3.8 65 Units ℃/W ℃/W
200704051-1/4
Data & specifications subject to change without notice
. .. 4U.
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Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj o
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=1m A
Min. 650 2
- Typ. 0.6 2.5 16.7 4.1 4.9 11 8.3 23.8 8.2 950 65 6
Max. Units 2.4 4 10 100 ±100 V V/℃ Ω V S u A u A n A n C n C n C ns ns ns ns p F p F p F
Breakdown Voltage Temperature Coefficient Reference to 25 ℃, ID=1m A
RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss...
