3310GH Datasheet, Advanced Power Electronics

G G D S TO-252(H) D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ.

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and costeffectiveness. This device is suited for low voltage and battery power applications. G G D S TO-252(H) D S TO-251(J) Abs.

3310

3310-001

3310-002

3310C-001

3310C-002

3310C-101

3310F

3310H-002

3310H-003

3310H-025

3310P-001

3310P-025

3310R-001