ALD110904 array equivalent, quad/dual n-channel enhancement mode epad precision matched pair mosfet array.
* Enhancement-mode (normally off)
* Precision Gate Threshold Voltage of +0.40V
* Matched MOSFET to MOSFET characteristics
* Tight lot to lot parametric co.
* Ultra low power (nanowatt) analog and digital circuits
* Ultra low operating voltage(<0.40V) circuits
* Su.
ALD110804/ALD110904 are high precision monolithic quad/dual enhancement mode N-Channel MOSFETS matched at the factory using ALD’s proven EPAD® CMOS technology. These devices are intended for low voltage, small signal applications. The ALD110804/ALD11.
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