FDD6606
Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed.
Features
- 75 A, 30 V RDS(ON) = 6 mΩ @ VGS = 10 V RDS(ON) = 8 mΩ @ VGS = 4.5 V
- Low gate charge
- Fast switching
- High performance trench technology for extremely low RDS(ON)
Applications
- DC/DC converter
- Motor Drives
D-PAK TO-252 (TO-252)
TA=25o C unless otherwise noted
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current
- Continuous
- Pulsed
Parameter
Ratings
30 ± 20
(Note 3) (Note 1a) (Note 1) (Note 1a) (Note 1b)
Units
75 100 71 3.8 1.6
- 55 to +175
Power Dissipation for Single Operation
TJ, TSTG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RθJC RθJA RθJA Thermal Resistance, Junction-to-Case Thermal...
