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RTAX250SL Datasheet Radtolerant Fpgas

Manufacturer: Actel Corporation

Overview: v5.3 www.DataSheet4U.com RTAX-S/SL RadTolerant FPGAs Radiation Performance • SEU-Hardened Registers Eliminate the Need for TripleModule Redundancy (TMR) – Immune to Single-Event Upsets (SEU) to LETTH > 37 MeV-cm2/mg – SEU Rate < 10-10 Errors/Bit-Day in Worst-Case Geosynchronous Orbit Expected SRAM Upset Rate of <10-10 Errors/Bit-Day with Use of Error Detection and Correction (EDAC) IP (included) with Integrated SRAM Scrubber – Single-Bit Correction, Double-Bit Detection – Variable-Rate Background Refreshing Total Ionizing Dose Up to 300 krad (Si, Functional) Single-Event Latch-Up Immunity (SEL) to LETTH > 117 MeVcm2/mg TM1019 Test Data Available Single Event Transient (SET) – No Anomalies up to 150 MHz Leading-Edge Performance • • • • High-Performance Embedded FIFOs 350+ MHz System Performance 500+ MHz Internal Performance 700 Mb/s LVDS Capable I/Os • Specifications • • • • • • Up to 4 Million Equivalent System Gates or 500 k Equivalent ASIC Gates Up to 20,160 SEU-Hardened Flip-Flops Up to 840 I/Os Up to 540 kbits Embedded SRAM Manufactured on Advanced 0.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • Single-Chip, Nonvolatile Solution 1.5 V Core Voltage for Low Power Flexible, Multi-Standard I/Os:.
  • 1.5 V, 1.8 V, 2.5 V, 3.3 V Mixed Voltage Operation.
  • Bank-Selectable I/Os.
  • 8 Banks per Chip.
  • Single-Ended I/O Standards: LVTTL, LVCMOS, 3.3 V PCI.
  • JTAG Boundary Scan Testing (as per IEEE 1149.1).
  • Differential I/O Standards: LVPECL and LVDS.
  • Voltage-Referenced I/O Standards: GTL+, HSTL Class 1, SSTL2 Class 1.

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