AM1030N mosfet equivalent, 100v n-channel mosfet.
3.0A, 100V, RDS(on) = 0.19Ω @VGS = 10 V Low gate charge ( typical 5.8 nC) Low Crss ( typical 10 pF) Fast switching Improved dv/dt capability
PIN ASSIGNMENT The package.
such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. FEATURES 3.0A, 100V, RDS(on.
These N-Channel enhancement mode power field effect transistors are produced using DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high ener.
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