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MGA-638P8 - High Linearity Low Noise Amplifier

General Description

Avago Technologies’ MGA-638P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier (LNA).

This LNA has low noise and high linearity achieved through the use of Avago Technologies’ proprietary 0.25 m GaAs Enhancement-mode pHEMT process.

Key Features

  •  High linearity performance.
  •  Low Noise Figure.
  •  GaAs E-pHEMT Technology[1].
  •  Low cost small package size.
  •  Integrated with active bias and option to access FET gate.
  •  Integrated power down control pin. Specifications 2.5 GHz; 4.8 V, 84 mA.
  •  17.3 dB Gain.
  •  0.87 dB Noise Figure.
  •  14 dB Input Return Loss.
  •  22.6 dBm Input IP3.
  •  22.2 dBm Output Power at 1 dB gain compression.

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Datasheet Details

Part number MGA-638P8
Manufacturer AVAGO
File Size 161.28 KB
Description High Linearity Low Noise Amplifier
Datasheet download datasheet MGA-638P8 Datasheet

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MGA-638P8 High Linearity Low Noise Amplifier Data Sheet Description Avago Technologies’ MGA-638P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier (LNA). This LNA has low noise and high linearity achieved through the use of Avago Technologies’ proprietary 0.25 m GaAs Enhancement-mode pHEMT process. It is housed in the miniature 2.0 x 2.0 x 0.75 mm3 8-pin Dual-Flat-Non-Lead (DFN) package. The device is designed for optimum use from 2.5 GHz up to 4.0 GHz. The compact footprint and low profile coupled with low noise, high gain and high linearity make this an ideal choice as a low noise amplifier for cellular infrastructure applications such as LTE, GSM, CDMA, W-CDMA, CDMA2000 & TD-SCDMA. For optimum performance at lower frequency from 450 MHz up to 1.