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HSMS-2805 - Surface Mount RF Schottky Barrier Diodes

Download the HSMS-2805 datasheet PDF. This datasheet also covers the HSMS-2800 variant, as both devices belong to the same surface mount rf schottky barrier diodes family and are provided as variant models within a single manufacturer datasheet.

Description

These Schottky diodes are specifically designed for both analog and digital applications.

This series offers a wide range of specifications and package configurations to give the designer wide flexibility.

The HSMS-280x series of diodes is optimized for high voltage applications.

Features

  • x Surface Mount Packages x High Breakdown Voltage x Low FIT (Failure in Time) Rate.
  • x Six-sigma Quality Level x Single, Dual and Quad Versions x Tape and Reel Options Available x Lead-free.
  • For more information see the Surface Mount Schottky Reliability Data Sheet. Package Lead Code Identification, SOT-323 (Top View) SINGLE SERIES Package Lead Code Identification, SOT-363 (Top View) HIGH.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HSMS-2800-AVAGO.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HSMS-2805
Manufacturer AVAGO
File Size 137.91 KB
Description Surface Mount RF Schottky Barrier Diodes
Datasheet download datasheet HSMS-2805 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HSMS-280x Surface Mount RF Schottky Barrier Diodes Data Sheet Description/Applications These Schottky diodes are specifically designed for both analog and digital applications. This series offers a wide range of specifications and package configurations to give the designer wide flexibility. The HSMS-280x series of diodes is optimized for high voltage applications. Note that Avago’s manufacturing techniques assure that dice found in pairs and quads are taken from adjacent sites on the wafer, assuring the highest degree of match.
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