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THN4201 - SiGe NPN Transistor

Description

Base Emitter Collector Available Package Product Package THN4201U SOT-323 THN4201Z SOT-343 THN4201E SOT-5

Features

  • s o Low Noise Figure NF = 1.5 dB at f = 2 GHz, VCE = 3 V, IC = 5 mA NF = 1.7 dB at f = 2 GHz, VCE = 1 V, IC = 3 mA o High Gain MAG = 13.5 dB at f = 2 GHz, VCE = 3 V, IC = 20 mA MAG = 13 dB at f = 2 GHz, VCE = 1 V, IC = 3 mA o High Transition Frequency fT = 16.5 GHz at VCE = 3 V, IC = 20 mA.
  • hFE Classification Marking AG1 AG2 hFE 125 to 300 80 to 160.
  • Absolute Maximum Ratings Symbol Parameter VCBO Collector to Base Breakdown Voltage VCEO Collector to Emitter Breakdown Vo.

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Datasheet Details

Part number THN4201
Manufacturer AUK
File Size 235.91 KB
Description SiGe NPN Transistor
Datasheet download datasheet THN4201 Datasheet

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Other Datasheets by AUK

Part Number Description
THN4201E SiGe NPN Transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Semiconductor □ Application LNA and wide band amplifier up to GHz range THN4201 Series SiGe NPN Transistor SOT-523 Unit in mm □ Features o Low Noise Figure NF = 1.5 dB at f = 2 GHz, VCE = 3 V, IC = 5 mA NF = 1.7 dB at f = 2 GHz, VCE = 1 V, IC = 3 mA o High Gain MAG = 13.5 dB at f = 2 GHz, VCE = 3 V, IC = 20 mA MAG = 13 dB at f = 2 GHz, VCE = 1 V, IC = 3 mA o High Transition Frequency fT = 16.