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SUF1002 - Dual N-ch Trench MOSFET

Key Features

  • Low drain-source On-resistance: RDS(on)=24mΩ @VGS=10V, ID=2.9A.
  • Low gate charge: Qg=79.5nC (Typ. ).
  • High power and current handing capability.
  • Lead free product is acquired Ordering Information Part Number Marking Code Package SOP-8 Packaging SUF1002 SUF1002 SOP-8 Tape & Reel Marking and Pin Assignment SUF1002 YWW Column 1: Device Code Column 2: Production Information - YWW: Year & Week Code Absolute Maximum Ratings (Tamb=25℃, Unless otherwise noted) Characterist.

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Full PDF Text Transcription for SUF1002 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SUF1002. For precise diagrams, and layout, please refer to the original PDF.

SUF1002 Dual N-ch Trench MOSFET 30V, 5.8A N-channel Trench MOSFET Features  Low drain-source On-resistance: RDS(on)=24mΩ @VGS=10V, ID=2.9A  Low gate charge: Qg=79.5nC (...

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istance: RDS(on)=24mΩ @VGS=10V, ID=2.9A  Low gate charge: Qg=79.5nC (Typ.

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