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STD5915 Datasheet Preview

STD5915 Datasheet

NPN Silicon Power Transistor

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STD5915
NPN Silicon Power Transistor
Features
High Voltage, high speed switching
VCEO(sus)=530V
Suitable for Switching Regulator and
Motor Control, Electronic Ballast
PIN Connection
B
Ordering Information
Type NO.
Marking
STD5915
STD5915
Package Code
TO-92
TO-92
C
E
Marking Diagram
STD
5915
YWW
Column 1,2 : Device Code
Column 3 : Production Information
e.g.) YWW
-. YWW : Date Code (year, Week)
Absolute Maximum Ratings
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current (Pulse)
Base current (DC)
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Ratings
900
530
9
1.5
3
0.75
1.1
150
-55~150
(Ta=25)
Unit
V
V
V
A
A
A
W
C
C
KSD-T0A011-004
1




AUK

STD5915 Datasheet Preview

STD5915 Datasheet

NPN Silicon Power Transistor

No Preview Available !

STD5915
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-base breakdown voltage
BVCBO IC=100uA, IE=0
Collector-emitter breakdown voltage BVCEO IC=10mA, IB=0
Emitter-base breakdown voltage
BVEBO IE=100uA, IC=0
Collector cut-off current
ICBO
VCB=900V, IE=0
Collector cut-off current
ICEO
VCE=530V, IB=0
Emitter cut-off current
IEBO
VEB=9V, IC=0
DC current gain
hFE*
IC=0.4A, VCE=10V
IC=1A, VCE=10V
IC=0.5A, IB=0.1A
Collector-emitter saturation voltage VCE(sat)* IC=1A, IB=0.25A
IC=1.5A, IB=0.5A
Base-emitter saturation voltage
VBE(sat)*
IC=0.5A, IB=0.1A
IC=1A, IB=0.25A
Transition frequency
fT VCB=10V, IC=0.1A, f=1MHz
Output capacitance
Cob VCB=10V, IE=0, f=0.1MHz
Turn on Time
ton
Storage Time
tstg
Fall Time
tf
* Pulse test: PW300 , Duty cycle2% Pulse
<
(Ta=25)
Min. Typ. Max. Unit
900 - - V
530 - - V
9- -V
- - 10 uA
- - 1 uA
- - 10 uA
20 - 40 -
6 - 40 -
- - 0.8
- - 1V
- - 2.5
- -1
V
- - 1.2
4 - - MHz
- 11 - pF
- - 1.1
- - 4
- - 0.7
KSD-T0A011-004
2


Part Number STD5915
Description NPN Silicon Power Transistor
Maker AUK
Total Page 6 Pages
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