SMN01Z30Q mosfet equivalent, advanced n-ch power mosfet.
* High Voltage : BVDSS=300V(Min.)
* Low Crss : Crss=3.2pF(Typ.)
* Low gate charge : Qg=2.9nC(Typ.)
* Low RDS(on) : RDS(on)=8Ω(Max.)
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Features
* High Voltage : BVDSS=300V(Min.)
* Low Crss : Crss=3.2pF(Typ.)
* Low gate charge : Qg=2.9nC(Typ.).
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