STC8050N
Absolute Maximum Ratings
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Emitter current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IE
PC
TJ
Tstg
Rating
30
25
6
800
-800
500
150
-55~150
(Ta=25°C)
Unit
V
V
V
mA
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-emitter breakdown voltage BVCEO IC=1mA, IB=0
Collector cut-off current
ICBO
VCB=30V, IE=0
Emitter cut-off current
DC current gain
IEBO
hFE*
VEB=6V, IC=0
VCE=1V, IC=50mA
Collector-emitter saturation voltage VCE(sat) IC=500mA, IB=50mA
Base-emitter voltage
VBE VCE=1V, IC=500mA
Transition frequency
fT VCE=5V, IC=10mA
Collector output capacitance
Cob VCB=10V, IE=0
* : hFE Rank / B : 85~160, C : 120~200, D : 160~300
(Ta=25°C)
Min. Typ. Max. Unit
25 - - V
- - 50 nA
- - 50 nA
85 - 300 -
- - 0.5 V
- 0.85 1.2
V
- 180 - MHz
- 19 - pF
KSD-T0C007-001
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