ATC18
Overview
The 64K x 32-bit cell is an embedded 2-Mbit Flash electrically erasable and programmable read only memory with a power supply of 1.8V ±10%. The memory is organized as 1024 pages of 64 32-bit words each.
- 64K x 32-bit Flash Embedded Memory Cell
- Fast Read Access Time *
- - Random Access Time: 70 ns Worst Case (Process, Voltage, Temperature) - Page Access Time: 40 ns Worst Case (Process, Voltage, Temperature) Single Supply Voltage: 1.8V ±10% Page Program Operation - 1024 Pages (64 Words/Page) - Internal Data Latches For 64 Words - Read Capability During Data Load Program Cycle Time: 4 ms per Page Including Auto-erase Full Chip Erase Available in 10 ms rdybsyn Signal For End of Program Detection Very Low Power Dissipation - 8 mA Active Current in Write and Erase - 4 mA Active Current in Random Read - 30 µA Stand-by Current High Reliability CMOS Technology - Typical Endurance: 100K Write/Word - Data Retention: 10 Years Erased State (Charged Gate) Is a Logic “1” * * *
- Embedded ASIC Memory Cell ATC18 64K x 32-bit Low-power Flash Advance Information *
