AT68166G Datasheet | Atmel

Features - - - - - - - - - - - - - - - 16 .. Mbit SRAM Multi Chip Module Allows 32-, 16- or 8-bit access configuration Operating Voltage: 3.3V + 0.3V Access Time - 20 ns, 18 ns for AT68166F - <18 ns for AT68166G (in development prototypes in Q4 2007) Power Consumption - Active: 620 m W per byte (Max) @ 18ns - 415 m W per byte (Max) @ 50ns (1) - Standby: 13 m W (Typ) Military Temperature Range: -55 to +125°C TTL-patible Inputs and Outputs Asynchronous Die manufactured on Atmel 0.25 µm Radiation Hardened Process No Single Event Latch Up below LET Threshold of 80 Me V/mg/cm2 Tested up to a Total Dose of 300 krads (Si) according to MIL-STD-883 Method 1019 ESD Better than 4000V Quality Grades: - QML-Q or V with SMD 5962-06229 - ESCC 950 Mils Wide MQFP 68 Package Mass : 8.5 grams 1. Only for AT68166F-18. 450m W for AT68166F-20. Rad Hard 16 Mega Bit 3.3V SRAM Multi Chip Module AT68166F AT68166G Note: Description The AT68166F/G is a 16Mbit SRAM packaged in a hermetic Multi Chip Module (MCM) for space applications. The AT68166F/G MCM incorporates four 4Mbit AT60142FT SRAM dice. It can be organized as either one bank of 512Kx8, two banks of 512Kx16 or four banks of 512Kx8. It bines rad-hard capabilities, a latch-up threshold of 80Me V.cm²/mg, a Multiple Bit Upset immunity and a total dose tolerance of 300Krads, with a fast access time. The MCM packaging technology allows a reduction of the PCB area by 50% with a weight savings of 75% pared to four 4Mbit packages. Thanks to the small size of the 4Mbit SRAM die, Atmel has been able to acmodate the assembly of the four dice on one side of the package which facilitates the power dissipation. The patibility with other products allows designers to easily migrate to the Atmel AT68166F/G memory. The AT68166F/G is powered at 3.3V. The AT68166F/G is processed according to the test methods of the latest revision of the MIL-PRF-38535 or the ESCC 9000. 7747A- AERO- 07/07 Block Diagram .. Figure 1. AT68166F/G Block Diagram CS3 WE3 CS2 WE2 CS1...