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AT52BR1672T - 16-megabit Flash and 2-megabit/ 4-megabit SRAM Stack Memory

Description

The AT52BR1672(T) combines a 16-megabit Flash (1M x 16) and a 2-megabit SRAM (organized as 128K x 16) in a stacked CBGA package; while the AT52BR1674(T) combines a 16megabit Flash (1M x 16) and a 4-megabit SRAM (organized as 256K x 16) in a stacked CBGA package.

Features

  • 16-Mbit Flash and 2-Mbit/4-Mbit SRAM.
  • Single 66-ball 8 mm x 10 mm x 1.2 mm CBGA Package.
  • 2.7V to 3.3V Operating Voltage Flash.
  • 2.7V to 3.3V Read/Write.
  • Access Time.
  • 85 ns.
  • Sector Erase Architecture.
  • Thirty-one 32K Word (64K Byte) Sectors with Individual Write Lockout.
  • Eight 4K Word (8K Byte) Sectors with Individual Write Lockout Fast Word Program Time.
  • 20 µs Fast Se.

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Other Datasheets by Atmel (Microchip)

Part Number Description
AT52BR1672 16-megabit Flash and 2-megabit/ 4-megabit SRAM Stack Memory
AT52BR1674 16-megabit Flash and 2-megabit/ 4-megabit SRAM Stack Memory
AT52BR1674T 16-megabit Flash and 2-megabit/ 4-megabit SRAM Stack Memory
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Features • 16-Mbit Flash and 2-Mbit/4-Mbit SRAM • Single 66-ball 8 mm x 10 mm x 1.2 mm CBGA Package • 2.7V to 3.3V Operating Voltage Flash • 2.7V to 3.
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