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AT49BV1614T - 16-Megabit (1M x 16/2M x 8) 3-volt Only Flash Memory

Features

  • 2.7V to 3.3V Read/Write.
  • Access Time - 90 ns.
  • Sector Erase Architecture.
  • Thirty 32K Word (64K Byte) Sectors with Individual Write Lockout.
  • Eight 4K Word (8K Byte) Sectors with Individual Write Lockout.
  • Two 16K Word (32K Byte) Sectors with Individual Write Lockout.
  • Fast Word Program Time - 20 µs.
  • Fast Sector Erase Time - 200 ms.
  • Dual Plane Organization, Permitting Concurrent Read while Program/Erase Memory Plane A:.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Features • 2.7V to 3.
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