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AT28C16 - 16K 2K x 8 CMOS E2PROM

General Description

The AT28C16 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with easy to use

Key Features

  • Fast Read Access Time - 150 ns.
  • Fast Byte Write - 200 µs or 1 ms.
  • Self-Timed Byte Write Cycle.
  • Internal Address and Data Latches.
  • Internal Control Timer.
  • Automatic Clear Before Write Direct Microprocessor Control.
  • DATA.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Features • Fast Read Access Time - 150 ns • Fast Byte Write - 200 µs or 1 ms • Self-Timed Byte Write Cycle – Internal Address and Data Latches – Internal Control Timer – Automatic Clear Before Write Direct Microprocessor Control – DATA POLLING Low Power – 30 mA Active Current – 100 µA CMOS Standby Current High Reliability – Endurance: 104 or 105 Cycles – Data Retention: 10 Years 5V ± 10% Supply CMOS & TTL Compatible Inputs and Outputs JEDEC Approved Byte Wide Pinout Commercial and Industrial Temperature Ranges • • • • • • • 16K (2K x 8) Parallel EEPROMs AT28C16 Description The AT28C16 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with easy to use features. The AT28C16 is a 16K memory organized as 2,048 words by 8 bits.