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AT28C040 - 4-Megabit (512K x 8) Paged Parallel EEPROM

Description

The AT28C040 is a high-performance electrically erasable and programmable readonly memory (EEPROM).

Its 4 megabits of memory is organized as 524,288 words by 8 bits.

Features

  • Read Access Time.
  • 200 ns.
  • Automatic Page Write Operation.
  • Internal Address and Data Latches for 256 Bytes.
  • Internal Control Timer.
  • Fast Write Cycle Time.
  • Page Write Cycle Time.
  • 10 ms Maximum.
  • 1 to 256 Byte Page Write Operation.
  • Low Power Dissipation.
  • 50 mA Active Current.
  • Hardware and Software Data Protection.
  • DATA Polling for End of Write Detection.
  • High Reliability CMO.

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Full PDF Text Transcription

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Features • Read Access Time – 200 ns • Automatic Page Write Operation – Internal Address and Data Latches for 256 Bytes – Internal Control Timer • Fast Write Cycle Time – Page Write Cycle Time – 10 ms Maximum – 1 to 256 Byte Page Write Operation • Low Power Dissipation – 50 mA Active Current • Hardware and Software Data Protection • DATA Polling for End of Write Detection • High Reliability CMOS Technology – Endurance: 10,000 Cycles – Data Retention: 10 Years • Single 5V ± 10% Supply • CMOS and TTL Compatible Inputs and Outputs • JEDEC Approved Byte-Wide Pinout 1. Description The AT28C040 is a high-performance electrically erasable and programmable readonly memory (EEPROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits.
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