AT28C040 Datasheet | Atmel

Features - Read Access Time - 200 ns - Automatic Page Write Operation - Internal Address and Data Latches for 256 Bytes - Internal Control Timer - Fast Write Cycle Time - Page Write Cycle Time - 10 ms Maximum - 1 to 256 Byte Page Write Operation - Low Power Dissipation - 50 m A Active Current - Hardware and Software Data Protection - DATA Polling for End of Write Detection - High Reliability CMOS Technology - Endurance: 10,000 Cycles - Data Retention: 10 Years - Single 5V ± 10% Supply - CMOS and TTL patible Inputs and Outputs - JEDEC Approved Byte-Wide Pinout 1. Description The AT28C040 is a high-performance electrically erasable and programmable readonly memory (EEPROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of just 440 m W. The AT28C040 is accessed like a static RAM for the read or write...