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AT28BV64 - 64K (8K x 8) Battery-Voltage Parallel EEPROMs

General Description

The AT28BV64 is a low-voltage, low-power Electrically Erasable and Programmable Read-only Memory specifically designed for battery powered applications.

Its 64K of memory is organized 8,192 words by 8 bits.

Key Features

  • 2.7V to 3.6V Supply.
  • Full Read and Write Operation.
  • Low Power Dissipation.
  • 8 mA Active Current.
  • 50 µA CMOS Standby Current.
  • Read Access Time.
  • 300 ns.
  • Byte Write.
  • 3 ms.
  • Direct Microprocessor Control.
  • DATA Polling.
  • READY/BUSY Open Drain Output.
  • High Reliability CMOS Technology.
  • Endurance: 100,000 Cycles.
  • Data Retention: 10 Years.
  • JEDEC Approved Byte-Wide.

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Part Number Description
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Features • 2.7V to 3.6V Supply – Full Read and Write Operation • Low Power Dissipation – 8 mA Active Current – 50 µA CMOS Standby Current • Read Access Time – 300 ns • Byte Write – 3 ms • Direct Microprocessor Control – DATA Polling – READY/BUSY Open Drain Output • High Reliability CMOS Technology – Endurance: 100,000 Cycles – Data Retention: 10 Years • JEDEC Approved Byte-Wide Pinout • Industrial Temperature Ranges 64K (8K x 8) Battery-Voltage Parallel EEPROMs 1. Description The AT28BV64 is a low-voltage, low-power Electrically Erasable and Programmable Read-only Memory specifically designed for battery powered applications. Its 64K of memory is organized 8,192 words by 8 bits.