Datasheet Summary
Features
- 2.7V to 3.6V Supply
- Full Read and Write Operation
- Low Power Dissipation
- 8 mA Active Current
- 50 µA CMOS Standby Current
- Read Access Time
- 300 ns
- Byte Write
- 3 ms
- Direct Microprocessor Control
- DATA Polling
- READY/BUSY Open Drain Output
- High Reliability CMOS Technology
- Endurance: 100,000 Cycles
- Data Retention: 10 Years
- JEDEC Approved Byte-Wide Pinout
- Industrial Temperature Ranges
64K (8K x 8) Battery-Voltage Parallel EEPROMs
1. Description
The AT28BV64 is a low-voltage, low-power Electrically Erasable and Programmable Read-only Memory specifically designed for battery powered applications. Its 64K of memory is organized 8,192 words by 8 bits....