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AT28BV256 - 256K (32K x 8) Battery-Voltage Parallel EEPROMs

General Description

The AT28BV256 is a high-performance electrically erasable and programmable readonly memory.

Its 256K of memory is organized as 32,768 words by 8 bits.

Key Features

  • Single 2.7V - 3.6V Supply.
  • Fast Read Access Time.
  • 200 ns.
  • Automatic Page Write Operation.
  • Internal Address and Data Latches for 64 Bytes.
  • Internal Control Timer.
  • Fast Write Cycle Times.
  • Page Write Cycle Time: 10 ms Maximum.
  • 1- to 64-byte Page Write Operation.
  • Low Power Dissipation.
  • 15 mA Active Current.
  • 20 µA CMOS Standby Current.
  • Hardware and Software Data Protection.
  • D.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Features • Single 2.7V - 3.6V Supply • Fast Read Access Time – 200 ns • Automatic Page Write Operation – Internal Address and Data Latches for 64 Bytes – Internal Control Timer • Fast Write Cycle Times – Page Write Cycle Time: 10 ms Maximum – 1- to 64-byte Page Write Operation • Low Power Dissipation – 15 mA Active Current – 20 µA CMOS Standby Current • Hardware and Software Data Protection • Data Polling for End of Write Detection • High Reliability CMOS Technology – Endurance: 10,000 Cycles – Data Retention: 10 Years • JEDEC Approved Byte-wide Pinout • Industrial Temperature Ranges • Green (Pb/Halide-free) Packaging Option Only 256K (32K x 8) Battery-Voltage Parallel EEPROMs AT28BV256 1.