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AT49BV8192A - 8-megabit (1M x 8/512K x 16) Flash Memory

Download the AT49BV8192A datasheet PDF. This datasheet also covers the AT49BV008A variant, as both devices belong to the same 8-megabit (1m x 8/512k x 16) flash memory family and are provided as variant models within a single manufacturer datasheet.

Description

The AT49BV008A(T) and AT49BV/LV8192A(T) are 3-volt, 8-megabit Flash memories organized as 1,048,576 words of 8 bits each or 512K words of 16 bits each.

Features

  • Single-voltage Read/Write Operation: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV).
  • Fast Read Access Time.
  • 70 ns.
  • Internal Erase/Program Control.
  • Sector Architecture.
  • One 8K Word (16K Bytes) Boot Block with Programming Lockout.
  • Two 4K Word (8K Bytes) Parameter Blocks.
  • One 496K Word (992K Bytes) Main Memory Array Block.
  • Fast Sector Erase Time.
  • 10 seconds.
  • Byte-by-byte or Word-by-word Programming.
  • 3.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AT49BV008A-ATMEL.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
AT49BV802A 8-megabit (512K x 16/ 1M x 8) 3-volt Only Flash Memory ATMEL Corporation
AT49BV802AT 8-megabit (512K x 16/ 1M x 8) 3-volt Only Flash Memory ATMEL Corporation
AT49BV802D 8-megabit (512K x 16/ 1M x 8) 3-volt Only Flash Memory ATMEL Corporation
AT49BV802DT 8-megabit (512K x 16/ 1M x 8) 3-volt Only Flash Memory ATMEL Corporation
AT49BV1024A (AT49LV1024A / AT49BV1024A) 1-megabit (64K x 16) 3-volt Only Flash Memory ATMEL Corporation

Other Datasheets by Atmel (Microchip)

Part Number Description
AT49BV8192AT 8-megabit (1M x 8/512K x 16) Flash Memory
AT49BV8192 8-Megabit (512K x 16) CMOS Flash Memory
AT49BV8192T 8-Megabit (512K x 16) CMOS Flash Memory
AT49BV8011 8-megabit (512K x 16/1M x 8) 3-volt Only Flash Memory
AT49BV8011T 8-megabit (512K x 16/1M x 8) 3-volt Only Flash Memory

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Features • Single-voltage Read/Write Operation: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) • Fast Read Access Time – 70 ns • Internal Erase/Program Control • Sector Architecture – One 8K Word (16K Bytes) Boot Block with Programming Lockout – Two 4K Word (8K Bytes) Parameter Blocks – One 496K Word (992K Bytes) Main Memory Array Block • Fast Sector Erase Time – 10 seconds • Byte-by-byte or Word-by-word Programming – 30 µs Typical • Hardware Data Protection • Data Polling for End of Program Detection • Low Power Dissipation – 25 mA Active Current – 50 µA CMOS Standby Current • Typical 10,000 Write Cycles Description The AT49BV008A(T) and AT49BV/LV8192A(T) are 3-volt, 8-megabit Flash memories organized as 1,048,576 words of 8 bits each or 512K words of 16 bits each.
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