• 2.7V to 3.3V Read/Write
• Access Time - 90 ns
• Sector Erase Architecture
– Thirty 32K Word (64K Byte) Sectors with Individual Write Lockout
– Eight 4K Word (8K Byte) Sectors with Individual Write Lockout
– Two 16K Word (32K Byte) Sectors with Individual Write Lockout
• Fast Word Program Time - 20.