AT28C010 Datasheet | Atmel

Features - Fast Read Access Time - 120 ns - Automatic Page Write Operation - Internal Address and Data Latches for 128 Bytes - Internal Control Timer - Fast Write Cycle Time - Page Write Cycle Time - 10 ms Maximum - 1 to 128-byte Page Write Operation - Low Power Dissipation - 40 m A Active Current - 200 µA CMOS Standby Current - Hardware and Software Data Protection - DATA Polling for End of Write Detection - High Reliability CMOS Technology - Endurance: 104 or 105 Cycles - Data Retention: 10 Years - Single 5V ± 10% Supply - CMOS and TTL patible Inputs and Outputs - JEDEC Approved Byte-wide Pinout - Industrial Temperature Ranges - Green (Pb/Halide-free) Packaging Option Only 1-megabit (128K x 8) Paged Parallel EEPROM 1. Description The AT28C010 is a high-performance electrically-erasable and programmable readonly memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m W. When the device is deselected, the CMOS standby current is less than 200 µA. The AT28C010 is accessed like a Static RAM for the read or write cycle without the need for external ponents. The device contains a 128-byte page register to allow writing of up to 128 bytes simultaneously. During a write cycle, the address and 1 to 128 bytes of data are internally latched, freeing the address and data bus for other operations. Following the initiation of a write cycle, the device will automatically write the latched data using an internal control timer. The end of a write cycle can be detected by DATA polling of I/O7. Once the end of a write cycle has been detected a new access for a read or write can begin. Atmel’s AT28C010 has additional features to ensure high quality and manufacturability. The device utilizes internal error correction for extended endurance and improved data retention characteristics. An optional software data...