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AT28C010 - 1-megabit (128K x 8) Paged Parallel EEPROM

Download the AT28C010 datasheet PDF. This datasheet also covers the AT28C010-1 variant, as both devices belong to the same 1-megabit (128k x 8) paged parallel eeprom family and are provided as variant models within a single manufacturer datasheet.

General Description

The AT28C010 is a high-performance electrically-erasable and programmable readonly memory.

Its 1 megabit of memory is organized as 131,072 words by 8 bits.

Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 mW.

Key Features

  • Fast Read Access Time.
  • 120 ns.
  • Automatic Page Write Operation.
  • Internal Address and Data Latches for 128 Bytes.
  • Internal Control Timer.
  • Fast Write Cycle Time.
  • Page Write Cycle Time.
  • 10 ms Maximum.
  • 1 to 128-byte Page Write Operation.
  • Low Power Dissipation.
  • 40 mA Active Current.
  • 200 µA CMOS Standby Current.
  • Hardware and Software Data Protection.
  • DATA Polling for End of Wri.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AT28C010-1-ATMEL.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
AT28C010 1-Megabit (128K x 8) Paged Parallel Military EEPROM ATMEL Corporation
AT28C010 1-Megabit (128K x 8) Paged Parallel EEPROM Microchip
AT28C040 4-Megabit (512K x 8) Paged Parallel EEPROM ATMEL Corporation
AT28C16 16K 2K x 8 CMOS E2PROM ATMEL Corporation
AT28C17 16K 2K x 8 CMOS E2PROM ATMEL Corporation

Other Datasheets by Atmel (now Microchip Technology)

Part Number Description
AT28C010-12DK Space 1-MBit (128K x 8) Paged Parallel EEPROM
AT28C16-T 16K (2K x 8) PCMCIA Nonvolatile Attribute Memory
AT21CS01 EEPROM
AT22V10 (AT22V10/L) High Speed UV Erasable Programmable Logic Device
AT22V10B High Speed UV Erasable Programmable Logic Device

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Features • Fast Read Access Time – 120 ns • Automatic Page Write Operation – Internal Address and Data Latches for 128 Bytes – Internal Control Timer • Fast Write Cycle Time – Page Write Cycle Time – 10 ms Maximum – 1 to 128-byte Page Write Operation • Low Power Dissipation – 40 mA Active Current – 200 µA CMOS Standby Current • Hardware and Software Data Protection • DATA Polling for End of Write Detection • High Reliability CMOS Technology – Endurance: 104 or 105 Cycles – Data Retention: 10 Years • Single 5V ± 10% Supply • CMOS and TTL Compatible Inputs and Outputs • JEDEC Approved Byte-wide Pinout • Industrial Temperature Ranges • Green (Pb/Halide-free) Packaging Option Only 1-megabit (128K x 8) Paged Parallel EEPROM AT28C010 1.