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ASC60N1200MT3 - 1200V N-Channel MOSFET

Description

Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon.

In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.

Features

  • High Speed Switching with Low Capacitances.
  • High Blocking Voltage with Low RDS(on).
  • Simple to drive with Standard Gate Drive.
  • 100% avalanche tested.
  • Maximum junction temperature of 150°C.
  • ROHS Compliant.

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Datasheet Details

Part number ASC60N1200MT3
Manufacturer
File Size 777.88 KB
Description 1200V N-Channel MOSFET
Datasheet download datasheet ASC60N1200MT3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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V X / Mob:15919711751 ASC60N1200MT3 1200V N-Channel MOSFET Description Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size.
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