THX15C transistor equivalent, npn silicon rf power transistor.
INCLUDE:
* Gold Metalization
* Emitter Ballasting
MAXIMUM RATINGS
IC VCB PDISS TJ TSTG θJC 10 A 110 V 233 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +200 °C 0.75.
PACKAGE STYLE .550 4L STUD
FEATURES INCLUDE:
* Gold Metalization
* Emitter Ballasting
MAXIMUM RATINGS
IC VCB.
The ASI THX15C is a Common Emitter Device Designed for High Linearity Class A/AB HF Applications.
PACKAGE STYLE .550 4L STUD
FEATURES INCLUDE:
* Gold Metalization
* Emitter Ballasting
MAXIMUM RATINGS
IC VCB PDISS TJ TSTG θJC 10 A 110 V 23.
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