Datasheet Summary
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NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI THX15C is a mon Emitter Device Designed for High Linearity Class A/AB HF Applications.
PACKAGE STYLE .550 4L STUD
Features
INCLUDE:
- Gold Metalization
- Emitter Ballasting
MAXIMUM RATINGS
IC VCB PDISS TJ TSTG θJC 10 A 110 V 233 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +200 °C 0.75 °C/W
1 = COLLECTOR 2 & 4 = EMITTER 3 = BASE
CHARACTERISTICS
SYMBOL
BVCEO BVCES BVCBO BVEBO ICES ICEO hFE Cob Pg IMD3 ηC
TC = 25 °C
TEST CONDITIONS
IC = 100 mA IC = 100 mA IC = 100 mA IE = 10 mA VCE = 60 V VCE = 30 V VCE = 6.0 V VCB = 50 V VCE = 50 V f = 30 MHz Icq = 100 mA Pout =150 W (PEP) IC = 1.4 A f = 1.0 MHz VBE = 0...
