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PT9701B Datasheet Preview

PT9701B Datasheet

NPN SILICON RF POWER TRANSISTOR

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PT9701B
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI PT9701B is a Common
Emitter Device Designed for Class A ,
AB and C Amplifier Applications in the
225 - 400 MHz Military
Communications Band.
FEATURES INCLUDE:
Gold Metalization
Emitter Ballasting
High Gain
MAXIMUM RATINGS
IC 1.25 A
VCES
PDISS
TJ
T STG
θ JC
45 V
14 W @ TC = 25 OC
-55 OC to +200 OC
-55 OC to +200 OC
12 OC/W
PACKAGE STYLE .280 4L STUD
1 = COLLECTOR 2 = BASE
3 & 4 = EMITTER
CHARACTERISTICS TC = 25 OC
SYMBOL
TEST CONDITIONS
BVCEO
IC = 20 mA
BVCES
IC = 10 mA
BVEBO
IE = 1.0 mA
hFE VCE = 5.0 V IC = 200 mA
MINIMUM TYPICAL MAXIMUM
25
45
3.5
15
UNITS
V
V
V
---
Cob VCB = 28 V
f = 1.0 MHz
7.0 pF
PG
η
VCE = 28 V
Pout = 5.0 W
C
f = 400 MHz
10
50
12
55
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
FreeDatasheethtp/:/wwwd.atasheet4uc.om/


Part Number PT9701B
Description NPN SILICON RF POWER TRANSISTOR
Maker ASI
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PT9701B Datasheet PDF






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