MT5C2565 - 64K x 4 SRAM MEMORY ARRAY

ASI

Datasheet Details

The Austin Semiconductor SRAM family employs high-speed, low-power CMOS designs using a four-transistor memory cell.

Austin Semiconductor SRAMs are fabricated using double-layer metal, double-layer polysilicon technology.

For flexibility in high-speed memory applications, Austin Semiconductor offers chip enable (CE) and output enable (OE) capability.

SRAM Austin Semiconductor, Inc.

64K x 4 SRAM SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-89524 • MIL-STD-883 MT5C2565 PIN ASSIGNMENT (Top.

High Speed: 12, 15, 20, 25, 35, and 45ns Battery Backup: 2V data retention Low power standby High-performance, low-power, CMOS double-metal process.
Single +5V (+10%) Power Supply.
Easy memory expansion with CE.
All inputs and outputs are TTL compatible NC A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 CE OE Vss 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 Vcc A15 A14 A13 A12 A11 A10 NC NC DQ4 DQ3 DQ2 DQ1 WE A1.

Brand Logo	Part Number	Description	Manufacturer
	MT5C2565	64K x 4 SRAM	Micron

Part Number	Description
MT5C2564	SRAM
MT5C1001	SRAM
MT5C1005	SRAM MEMORY ARRAY
MT5C1008	128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS
MT5C6404	16K x 4 SRAM SRAM MEMORY ARRAY
MT5C6405	16K x 4 SRAM SRAM MEMORY ARRAY
MT5C6408	8K x 8 SRAM